參數(shù)資料
型號: W963A6BBN80I
廠商: WINBOND ELECTRONICS CORP
元件分類: SRAM
英文描述: 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
中文描述: 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
封裝: 6 X 8 MM, 0.75 MM PITCH, TFBGA-48
文件頁數(shù): 1/29頁
文件大小: 955K
代理商: W963A6BBN80I
W963A6BBN
512K WORD
×
16BIT LOW POWER PSEUDO SRAM
Publication Release Date: March 10, 2003
- 1 -
Revision A1
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 3
2. FEATURES ......................................................................................................................................... 3
4. BALL CONFIGURATION .................................................................................................................... 4
5. BALL DESCRIPTION.......................................................................................................................... 4
6. BLOCK DIAGRAM .............................................................................................................................. 5
7. FUNCTION TRUTH TABLE................................................................................................................ 6
8. ELECRICAL CHARACTERISTICS ..................................................................................................... 7
Absolute Maximum Ratings .............................................................................................................. 7
Recommended Operating Conditions............................................................................................... 7
Capacitance ...................................................................................................................................... 8
DC Characteristics ............................................................................................................................ 8
AC Characteristics ............................................................................................................................ 9
Read Operation ..........................................................................................................................................9
Write Operation.........................................................................................................................................11
Power Down and Power Down Program Parameters ...............................................................................13
Other Timing Parameters .........................................................................................................................13
AC Test Conditions...................................................................................................................................13
9. TIMING WAVEFORMS ..................................................................................................................... 14
Read Timing #1 (
OE
Control Access)............................................................................................ 14
Read Timing #2 (
CE1
Control Access).......................................................................................... 15
Read Timing #3 (Address Access after
OE
Control Access)........................................................ 16
Read Timing #4 (Address Access after
CE1
Control Access)....................................................... 17
Write Timing #1 (
CE1
Control)....................................................................................................... 18
Write Timing #2-1 (
WE
Control, Single Write Operation).............................................................. 19
Write Timing #2 (
WE
Control, Continuous Write Operation)......................................................... 20
Read/Write Timing #1-1 (
CE1
Control)........................................................................................... 21
Read/Write Timing #1-2 (
CE1
Control)........................................................................................... 22
Read (
OE
Control) / Write (
WE
Control) Timing #2-1.................................................................. 23
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W963L6ABN 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
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參數(shù)描述
W963L6ABN 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM
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W963L6ABN70I 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM
W963L6ABN80 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM