參數(shù)資料
型號: W78M32VP110BM
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: PROM
英文描述: 8M X 32 FLASH 3.3V PROM, 110 ns, PBGA159
封裝: 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
文件頁數(shù): 46/51頁
文件大?。?/td> 1637K
代理商: W78M32VP110BM
50
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M32VP-XBX
January 2010
Rev. 12
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Document Title
8Mx32 Flash 3.3V Page Mode Multi-Chip Package (continued)
Revision History Continued
Rev #
History
Release Date
Status
Rev 8
Change (Pg. 1, 2, 17, 18, 19, 20, 21, 22, 23, 24, 25, 27)
8.1 Remove "/128KB sectors" from uniform sector architecture
- No Byte mode
8.2 Remove "/256 byte and /16 byte" from secured silicon
sector region.
8.3 Remove "under development, is not qualied or
characterized and is" or cancellation.
8.4 Remove "Pin A-1" from block diagram
8.5 Remove "Byte# = VIL" in device operations
8.6 Remove "AMax:A-1 in byte mode," from Notes in device
operations
8.7 Remove all reference to "Byte Address" from pages 17
through 23
8.8 Change ILI to 10μA for WP/ACC and 4μA for others,
ILIT = 70μA, ILO = 2μA, ICC1 = 110μA, IIO2 = 20μA,
ICC2 = 20μA, ICC3 = 180μA, ICC4 = 10μA, ICC5 = 1mA,
ICC6 = 10μA, IACC = 40mA for WP#/ACC Pin and
160mA for VCC Pin
8.9 Add Note (1) to AC Characteristics: tOE for data polling is
45ns when VIO = 1.65V to 2.7V and 32ns when VIO = 2.7V to
3.6V.
September 2009
Final
Rev 9
Change (Pg. 2, 3, 39)
9.1 Change DQ0-63 to DQ0-31 inf Fig. 2
9.2 Remove "/16 Bytes" in page read mode and replace "max"
with 22
9.3 Remove (A2 to A-1 in byte mode)
9.4 Remove "note" in Fig. 16
November 2009
Final
Rev 10
Change (Pg. 26, 27)
10.1 Corrected Table 35
10.2 Add “tCH” to Table 37
November 2009
Final
Rev 11
Change (Pg. 2)
11.1 Corrected pinout – DQ16-31 are B3, C2-C5, D2-D5,
E2-E5, and F3-F5
November 2009
Final
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