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參數資料
| 型號： | W78M32V70BM |
| 英文描述： | 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package |
| 中文描述： | 8Mx32閃光3.3V的頁面模式同步讀/寫操作多芯片封裝 |
| 文件頁數： | 41/54頁 |
| 文件大小： | 756K |
| 代理商： | W78M32V70BM |
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41
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W78M32V-XBX
April 2006
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
DC CHARACTERISTICS - CMOS COMPATABLE
V
CC
= 3.3V ± 0.3V. -55°C
≤
T
A
≤
+125°C
Symbol
Test Conditions
I
LI
V
IN
=V
SS
to V
CC
; V
CC
=V
CC
max
I
LO
V
OUT
= V
SS
to V
CC
, OE# = V
IH
; V
CC
= V
CC max
l
OC1
OE# = V
IH
, V
CC
= V
CC
max, f = 5 MHz (Note 1)
I
CC2
OE# = V
IH
, WE# =V
IL
l
CC3
CS#, RESET#, WP/ACC# = V
IO
± 0.3 V
I
CC5
V
IH
= V
IO
± 0.3 V; V
IL
= V
SS
± 0.3 V
I
CC6
OE# = V
IH
I
CC7
OE# = V
IH
V
IL
V
IO
= 3.3V ± 0.3V
V
IH
V
IO
= 3.3V ± 0.3V
V
HH
V
CC
= 3.0 V ± 0.3V
V
ID
Vcc = 3.0 V ± 0.3V
V
OL
I
OL
= 2.0 mA, V
CC
= V
CC
min
, V
IO
= 3.3V ± 0.3V
V
OH
I
OH
= -2.0 mA, V
CC
= V
CC
min
, V
IO
= 3.3V ± 0.3V
V
LKO
Parameter Description
Input Load Current (Addresses)
Output Leakage Current
V
CC
Active Read Current (Notes 1, 2)
V
CC
Active Write Current (Notes 2, 3)
V
CC
Standby Current (Note 2)
Automatic Sleep Mode (Notes 2, 4, 5)
V
CC
Active Read-While-Program Current (Notes 1, 2, 5)
V
CC
Active Read-While-Erase Current (Notes 1, 2, 5)
Input Low Voltage
Input High Voltage
Voltage for ACC Program Acceleration
Voltage for Autoselect and Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (Note 5)
Min
-2
-1
Max
2
1
60
50
75
75
90
90
0.8
V
CC
+0.3
9.5
12.5
0.4
Unit
μA
μA
mA
mA
μA
μA
mA
mA
V
V
V
V
V
V
V
-0.5
2.0
8.5
11.5
2.4
2.3
2.5
Notes:
1.
2.
3.
4.
The l
CC
current listed is typically less than 5 mA/MHz, with OE# at V
IH
.
Maximum l
CC
specifications are tested with V
CC
= V
CCMAX.
I
CC
active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable
for t
ACC
+ 150 ns. Typical sleep mode current is 2 μA.
Not tested.
5.
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相關代理商/技術參數 |
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