- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361784 > W49L401TS70B EEPROM PDF資料下載
參數(shù)資料
| 型號： | W49L401TS70B |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大小： | 307K |
| 代理商： | W49L401TS70B |
W49L401(T)
- 4 -
Block/Page Erase Operation
The W49L401(T) provides both uniform small page (2K-word) and non-symmetrical block
(4K/8K/16K/32K-word) erase capabilities for versatile Flash applications.
Each block or page can be erased individually by initiating a six-word command sequence. The block
address (BA) or page address (PA) is latched on the falling #WE edge of the sixth cycle while the
XX30/XX50(hex) data input command is latched at the rising edge of #WE. After the command loading
cycle, the device enters the internal block/page erase mode, which is automatically timed and will be
completed in a fast 50 mS (typical). The host system is not required to provide any control or timing
during this operation. The device will automatically return to normal read mode after the erase
operation completed. Data-polling, Toggle-Bit and/or RY/#BY pin can be used to detect end of erase
cycle.
The bootblock (8K-words) consists of 4 corresponding uniform pages of 2K-words each. When the
boot block lockout feature is activated, any page/block erase command with the associated PA/BA
within the bootblock address range (0000-01FFF for W49L401, and 3E000-3FFFF for W49L401T) will
be ignored and the device will return to read mode without any data changes.
Program Operation
The W49L401(T) is programmed on a word-by-word basis. Program operation can only change logical
data "1" to logical data "0" The erase operation (changed entire data in individual page/block or whole
chip from "0" to "1") is needed before programming.
The program operation is initiated by a 4-word command cycle (see Command Codes for Word
Programming). The device will internally enter the program operation immediately after the word-
program command is entered. The internal program timer will automatically time-out (50
μ
S max. -
T
BP
) once completed and return to normal read mode. Data_polling, Toggle_Bit and/or RY/#BY pin
can be used to detect end of program cycle.
Hardware Data Protection
The integrity of the data stored in the W49L401(T) is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 10 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The programming operation and read are inhibited when V
DD
is
less than 1.8V typical.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) V
DD
power-on delay: When V
DD
has reached its sense level, the device will automatically time-out
10 mS before any write (erase/program) operation.
Data Polling (DQ
7
)- Write Status Detection
The W49L401(T) includes a data polling feature to indicate the end of a program or erase cycle.
When the W49L401(T) is in the internal program or erase cycle, any attempt to read DQ
7
of the last
word loaded will receive the complement of the true data. Once the program or erase cycle is
completed, DQ
7
will show the true data. Note that, DQ
7
will show logical "0" during the erase cycle.
And it will become logical "1" or true data when the erase cycle is completed.
Toggle Bit (DQ
6
)- Write Status Detection
In addition to data polling, the W49L401(T) provides another method for determining the end of a
program cycle. During the internal program or erase cycle, any consecutive attempts to read DQ
6
will
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W49L401TT70B | EEPROM |
| W4DA25B | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|25A I(T) |
| W4DA25D | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|25A I(T) |
| W4DA25M | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) |
| W4DA25N | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|25A I(T) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W49L401TT70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| W49R1C4VG-12DC-SCO | 功能描述:低信號繼電器 - PCB 10A/12V SPDT RoHS:否 制造商:NEC 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 V 最大開關(guān)電流:1 A 線圈電流:1 A 線圈類型:Non-Latching 功耗:140 mW 端接類型:SMT 絕緣: 介入損耗: |
| W49R1C4VG-24DC-SCO | 制造商:Magnecraft 功能描述: |
| W49R1C4VG5D | 制造商:Magnecraft 功能描述:3-5 Days |
| W49R1C4VG5DCSCO | 制造商:Magnecraft 功能描述:Mount Enclosed Power Relay |
發(fā)布緊急采購，3分鐘左右您將得到回復。