參數(shù)資料
型號(hào)： W49F020
廠商： WINBOND ELECTRONICS CORP
英文描述： 256K X 8 CMOS FLASH MEMORY
中文描述： 256K × 8的CMOS閃存
文件頁(yè)數(shù)： 1/21頁(yè)
文件大?。?/td> 190K
代理商： W49F020
Preliminary W49F020
256K
×
8 CMOS FLASH MEMORY
Publication Release Date: October 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
×
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W49F020 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Byte-by-Byte programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90 nS
Endurance: 1K/10K cycles (typ.)
Twenty-year data retention
Hardware data protection
One 8K byte Boot Block with Lockout
protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin DIP and 32-pin
TSOP and 32-pin-PLCC
相關(guān)PDF資料
PDF描述
W49F020-70B 256K X 8 CMOS FLASH MEMORY
W49F020-90 256K X 8 CMOS FLASH MEMORY
W49F020-90B 256K X 8 CMOS FLASH MEMORY
W49F020P-70 256K X 8 CMOS FLASH MEMORY
W49F020P-70B 256K X 8 CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W49F020-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F020-70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F020-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F020-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F020P-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
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