- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361783 > W45NM50 (意法半導(dǎo)體) N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET PDF資料下載
參數(shù)資料
| 型號： | W45NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET |
| 中文描述： | N溝道550V Tjmax - 0.08ohm - 45A條至247的MDmesh MOSFET的商標(biāo) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 187K |
| 代理商： | W45NM50 |
3/9
STW45NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
fs
(2)
Forward Transconductance
C
iss
C
oss
C
rss
Reverse Transfer
Capacitance
C
oss eq.
(3)
Equivalent Output
Capacitance
R
G
Gate Input Resistance
Table 8: Source Drain Diode
Symbol
I
SD
Source-drain Current
I
SDM
(3)
Source-drain Current (pulsed)
V
SD
(2)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(2)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(3)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Test Conditions
Min.
Typ.
20
Max.
Unit
S
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Input Capacitance
Output Capacitance
3700
610
80
pF
pF
pF
V
GS
= 0V, V
DS
= 0V to 400V
325
pF
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
DD
= 250V, I
D
= 24 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 14)
V
DD
= 400 V, I
D
= 45 A, R
G
= 4.7
,
V
GS
= 10 V
(see Figure 14)
1.7
t
d(on)
t
r
Turn-on Delay Time
Rise Time
40
35
ns
ns
t
d(off)
t
f
t
c
Q
g
Q
gs
Q
gd
Turn-off Delay Time
Fall Time
Cross-over Time
18
23
44
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 45 A,
V
GS
= 10V
(see Figure 18)
87
23
42
117
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
45
A
180
A
I
SD
= 45 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25
°
C
(see Figure 16)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
520
7.8
30
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150
°
C
(see Figure 16)
680
11.2
33
ns
μC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W4893 | UNIJUNCTION TRANSISTOR|2UA I(P)|TO-92 |
| 2N1671A | 68HC11/Bidirectional-Compatible µP Reset Circuit |
| 2N1671B | UNIJUNCTION TRANSISTOR|6UA I(P)|TO-5 |
| 2N1671C | 68HC11/Bidirectional-Compatible µP Reset Circuit |
| 2N1677 | 68HC11/Bidirectional-Compatible µP Reset Circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W45NM60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET |
| W46 | 制造商:Arcolectric 功能描述: |
| W4601DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Epitaxial Planer Transistor |
| W4605 KIT | 制造商:Winslow Adaptics 功能描述:TO 220 AB MOUNTING KIT |
| W4605KIT | 制造商:Winslow Adaptics Ltd 功能描述:TO220 transistor mica mount kit |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。