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參數(shù)資料
| 型號(hào)： | W3HG64M72EEU806PD4IGG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, DMA200 |
| 封裝： | ROHS COMPLIANT, SO-CDIMM-200 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | W3HG64M72EEU806PD4IGG |
W3HG64M72EEU-PD4
May 2007
Rev. 1
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
512MB – 64Mx72 DDR2 SDRAM, SO-CDIMM, w/
PLL
DESCRIPTION
The W3HG64M72EEU is a 64Mx72 Double Data Rate
DDR2 SDRAM high density module. This memory
module consists of nine 64Mx8 bit with 4 banks DDR2
Synchronous DRAMs in FBGA packages, mounted on a
200-pin SO-DIMM FR4 substrate.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
Vendor source control options
Industrial temperature option
FEATURES
Unbuffered 200-pin (SO-CDIMM), Small-Outline
dual in-line memory module. Raw card "B"
Fast data transfer rates: PC2-6400*, PC2-5300,
PC2-4200 and PC2-3200
VCC = VCCQ 1.8V
VCCSPD = 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
Multiple internal device banks for concurrent
operation
Differential clock inputs (CK, CK#)
Programmable CAS# latency (CL): 3, 4, 5 and 6*
Posted CAS# additive latency: 0, 1, 2, 3 and 4
Adjustable data-output drive strength
On-die termination (ODT)
Serial Presence Detect (SPD) with EEPROM
Auto & self refresh (64ms: 8,192 cycle refresh)
Gold edge contacts
Single Rank
RoHS compliant
JEDEC approved pin-out
Package
200 Pin SO-CDIMM: 30.00mm (1.181") TYP.
OPERATING FREQUENCIES
PC2-3200
PC2-4200
PC2-5300
PC2-6400*
Clock Speed
200MHz
266MHz
333MHz
400MHz
CL-tRCD-tRP
3-3-3
4-4-4
5-5-5
6-6-6
* Consult factory for availability
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