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參數(shù)資料
| 型號： | W3HG232M64SEU665D4GG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 |
| 封裝： | ROHS COMPLIANT, SO-DIMM-200 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 154K |
| 代理商： | W3HG232M64SEU665D4GG |
W3HG232M64SEU-D4
June 2007
Rev. 2
ADVANCED
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
COMPONENTS AC OPERATING CONDITIONS CON'T
AC Characteristics
Symbol
534
403
Units
Parameter
Min
Max
Min
Max
Auto-Refresh to Active/Auto-Refresh command period
tRFC
105
-
105
-
s
Precharge-All (4 banks) command period
tRP
tRP + 1tCK
-tRP + 1tCK
-ns
Precharge-All (8 banks) command period
tRP
15 + 1tCK
-
15 + 1tCK
-ns
Read preamble
tRPRE
0.9
1.1
0.9
1.1
ns
Read postamble
tRPST
0.40
0.60
0.40
0.60
tCK
Active bank A to Active bank B command period
tRRD
7.5
-
7.5
-
10
-
10
-
tCK
Internal Read to Precharge command delay
tRTP
7.5
-
7.5
-
ns
Write preamble
tWPRE
0.25 x tCK
-
0.25 x tCK
-
ns
Write postamble
tWPST
0.40
0.60
0.40
0.60
ns
Write recovery time for write without Auto-Precharge
tWR
15
-
15
-
tCK
Write recovery time for write with Auto-Precharge
WR
tWR/tCK
-tWR/tCK
-tCK
Internal Write to Read command delay
tWTR
7.5
-
10
-
ns
Exit power down to any valid command (other than NOP or Deselect)
tXARD
2-2-
tCK
Exit active power-down mode to Read command (slow exit, lower power)
tXARDS
6-AL
-
6-AL
-
tCK
Exit precharge power-down to any valid command (other than NOP or
Deselect)
tXP
2-2-
tCK
Exit Self-Refresh to non-Read command
tXSNR
tRFC +10
-tRFC +10
-ns
Exit Self-Refresh to Read command
tXSRD
200
-
200
-
tCK
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| W3HG264M72EER665AD7XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM |
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