- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245697 > W3H32M64E-533SBC (MICROSEMI CORP-PMG MICROELECTRONICS) 32M X 64 DDR DRAM, 0.65 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H32M64E-533SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.65 ns, PBGA208 |
| 封裝： | 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 958K |
| 代理商： | W3H32M64E-533SBC |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
W3H32M64E-XSBX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 11
White Electronic Designs Corp. reserves the right to change products or specications without notice.
32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400 Mb/s
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 20mm
1.0mm pitch
Supply Voltage = 1.8V ± 0.1V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 3, 4 or 5
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 32M x 64, user congurable as 2 x
32M x 32
Weight: W3H32M64E-XSBX - 2.5 grams typical
BENEFITS
62% Space savings vs. FBGA
Reduced part count
42% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradeable to 64M x 64 density (contact factory
for information)
Area
4 x 209mm2 = 836mm2
320mm2
62%
4 x 90 balls = 360 balls
208 Balls
42%
S
A
V
I
N
G
S
I/O
Count
W3H32M64E-XSBX
CSP Approach (mm)
90
FBGA
11.0
19.0
20
16
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
White
Electronic
Designs
W3H32M64E-XSBX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W7NCF02GH10ISBJG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF04GH10CSA4BM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF04GH10IS7FM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF04GH10ISA2EM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF04GH10ISA4EM1G | FLASH 3.3V PROM MODULE, XMA50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H32M64E-533SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M64E-533SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
| W3H32M64E-667ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667ESI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
發(fā)布緊急采購，3分鐘左右您將得到回復。