- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140413 > W3H128M72E2-667NBI (WHITE ELECTRONIC DESIGNS CORP) 128M X 72 DDR DRAM, 0.5 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H128M72E2-667NBI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 13/31頁 |
| 文件大?。?/td> | 991K |
| 代理商： | W3H128M72E2-667NBI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
W3H128M72E-XNBX
20
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIGURE 12 – WRITE COMMAND
CS#
WE#
CAS#
RAS#
CKE
CA
A10
BANK ADDRESS
HIGH
EN AP
DIS AP
BA
CK
CK#
DON’T CARE
ADDRESS
Note: CA = column address; BA = bank address; EN AP = enable auto precharge; and
DIS AP = disable auto precharge.
TABLE 4 – WRITE USING CONCURRENT AUTO PRECHARGE
From Command (Bank n)
To Command (Bank m)
Minimum Delay (With Concurrent
Auto Precharge)
Units
WRITE with Auto Precharge
READ OR READ w/AP
(CL-1) + (BL/2) + tWTR
t
CK
WRITE or WRITE w/AP
(BL/2)
t
CK
PRECHARGE or ACTIVE
1
t
CK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H128M72E-400NBC | 128M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| WEDPS512K32-17BM | 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PBGA143 |
| WF512K32-150G1UI5 | 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| WF512K32-90G1UC5A | 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 |
| WF512K32N-120H1Q5A | 512K X 32 FLASH 5V PROM MODULE, 120 ns, CPGA66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
| W3H128M72E-533SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。