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參數(shù)資料
| 型號： | W3EG7264S262BD4 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | DDR DRAM MODULE, DMA200 |
| 封裝： | ROHS COMPLIANT, SO-DIMM-200 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 217K |
| 代理商： | W3EG7264S262BD4 |
W3EG7264S-AD4
-BD4
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2005
Rev. 3
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC
OPERATING CONDITIONS (Continued)
AC CHARACTERISTICS
335
262
265
202
PARAMETER
SYMBOL MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNITS NOTES
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
17
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
1111
tCK
Data valid output window
na
tQH - tDQSQ
ns
22
REFRESH to REFRESH command interval
tREFC
70.3
μs21
Average periodic refresh interval
tREFI
7.8
μs21
Terminating voltage delay to VCC
tVTD
0000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
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