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參數(shù)資料
| 型號： | W3EG7264S202D3 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 267K |
| 代理商： | W3EG7264S202D3 |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2007
Rev. 6
W3EG7264S-JD3-D3
IDD SPECIFICATIONS AND TEST CONDITIONS
DDR333, 266, 200: VCC = VCCQ = +2.5V ± 0.2V; DDR400: VCC = VCCQ = +2.6V ± 0.1V
Includes DDR SDRAM component only
Parameter
Symbol Conditions
DDR400@
CL=3
Max
DDR333@
CL=2.5
Max
DDR266@
CL=2
Max
DDR266@
CL=2.5
Max
DDR200@
CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
1395
1170
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
1665
1440
mA
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
45
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
495
405
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-
Down mode; tCK (MIN); CKE=(low)
405
315
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
540
450
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
1710
1485
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
1758
1575
rnA
Auto Refresh Current
IDD5
tRC = tRC (MIN)
3105
2610
mA
Self Refresh Current
IDD6
CKE 0.2V
45
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
4050
3645
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG7264S202JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| W3EG7264S262AD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL |
| W3EG7264S262BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL |
| W3EG7264S263JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| W3EG7264S265AD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL |
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