參數(shù)資料
型號(hào)： W3EG6466S202BD4SG
廠(chǎng)商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi)： DRAM
英文描述： 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
封裝： ROHS COMPLIANT, SO-DIMM-200
文件頁(yè)數(shù)： 8/13頁(yè)
文件大小： 210K
代理商： W3EG6466S202BD4SG
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6466S-AD4
-BD4
January 2005
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
16
W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC CHARACTERISTICS
0°C TA 70°C, VCC = 2.5V ± 0.2V
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 3.3V, VREF =1.4V ± 200mV
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCCQ
2.3
2.7
V
Reference Voltage
VREF
VCCQ/2 - 50mV
VCCQ/2 + 50mV
V
Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
Input High Voltage
VIH
VREF + 0.15
VCCQ + 0.3
V
Input Low Voltage
VIL
-0.3
VREF - 0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT - 0.76
V
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
50
pF
Input Capacitance (RAS#, CAS#, WE#)
CIN2
50
pF
Input Capacitance (CKE0, CKE1)
CIN3
26
pF
Input Capacitance (CK0,CK0#)
CIN4
5.5
pF
Input Capacitance (CS0#, CS1#)
CIN5
26
pF
Input Capacitance (DQM0-DQM8)
CIN6
13
pF
Input Capacitance (BA0-BA1)
CIN7
50
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
13
pF
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