- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245707 > W3EG6437S403D4S (MICROSEMI CORP-PMG MICROELECTRONICS) 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 PDF資料下載
參數(shù)資料
| 型號(hào)： | W3EG6437S403D4S |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封裝： | SO-DIMM-200 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 300K |
| 代理商： | W3EG6437S403D4S |
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY*
W3EG6437S-D4
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ±0.2V, VCC = 2.5V ±0.2V
Parameter
Symbol Conditions
DDR403
@CL=3
Max
DDR333
@CL=2.5
Max
DDR266
@CL=2, 2.5
Max
DDR200
@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC(MIN); tCK=tCK(MIN); DQ,DM and
DQS inputs changing once per clock cycle;
Address and control inputs changing once
every two cycles.
1100
980
900
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge;
Burst = 2; tRC=tRC(MIN);tCK=tCK(MIN); Iout =
0mA; Address and control inputs changing
once per clock cycle.
1300
1200
1080
mA
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power- down mode;
tCK=tCK(MIN); CKE=(low)
32
mA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK(MIN); CKE = high; Address and other
control inputs changing once per clock cycle.
Vin = Vref for DQ, DQS and DM.
480
400
360
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-down mode;
tCK(MIN); CKE=(low)
320
240
200
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS(MAX);
tCK=tCK(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address and
other control inputs changing once per clock
cycle.
560
480
400
mA
Operating Current
IDD4R
Burst = 2; Reads; Continous burst; One
device bank active;Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); Iout = 0mA.
1600
1360
1140
mA
Operating Current
IDD4W
Burst = 2; Writes; Continous burst; One
device bank active; Address and control
inputs changing once per clock cycle;
tCK=tCK(MIN); DQ,DM and DQS inputs
changing twice per clock cycle.
1420
1260
1040
mA
Auto Refresh Current
IDD5
tRC=tRC(MIN)
1600
1500
1340
mA
Self Refresh Current
IDD6
CKE
≤ 0.2V
32
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control inputs
change only during Active Read or Write
commands.
2600
2240
1920
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3EG7232S202BD4IS | 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 |
| W3EG7232S335BD4M | 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA200 |
| W3EG7262S262JD3S | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W3EG7262S265JD3M | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W7NCF01GH21CS2JG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG6462S202D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S202JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S262D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S262JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S263D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。