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參數(shù)資料
| 型號(hào)： | W3EG64255S335JD3GG |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 264K |
| 代理商： | W3EG64255S335JD3GG |
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W3EG64255S-JD3
6
White Electronic Designs
April 2005
Rev. 3
ADVANCED
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C TA +70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V.
Includes PLL and Register Power
Parameter
Symbol
Rank 1
Conditions
DDR333@CL=2.5
Max
DDR266:@CL=2, 2.5
Max
DDR200@CL=2
Max
Units
Rank 2
Standby
State
Operating Current
IDD0
One device bank; Active - Precharge;
tRC = tRC (MIN); tCK = tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control inputs
changing once every two cycles.
4140
3690
mA
IDD3N
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC = tRC (MIN);
tCK = tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
4680
4230
mA
IDD3N
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power-down
mode; tCK = tCK (MIN); CKE = (low)
180
rnA
IDD2P
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK = tCK (MIN); CKE = High; Address
and other control inputs changing once
per clock cycle. VIN = VREF for DQ,
DQS and DM.
1620
1440
mA
IDD2F
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down
mode; tCK (MIN); CKE = (low)
1260
1080
mA
IDD3P
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge;tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control inputs
changing once per clock cycle.
1800
1620
mA
IDD3N
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; tCK = tCK (MIN); lOUT = 0mA.
4770
4230
mA
IDD3N
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; tCK = tCK (MIN); DQ,DM and DQS
inputs changing once per clock cycle.
4590
4050
rnA
IDD3N
Auto Refresh Current
IDD5
tRC = tRC (MIN)
7020
6660
mA
IDD3N
Self Refresh Current
IDD6
CKE 0.2V
180
mA
IDD6
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control
inputs change only during Active Read
or Write commands.
9090
9000
7920
mA
IDD3N
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG64255S335JD3XG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR SDRAM REGISTERED, w/PLL |
| W3EG64255S-JD3 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR SDRAM REGISTERED, w/PLL |
| W3EG6432S202D3 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6432S202D4 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6432S202D4I | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED |
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