參數(shù)資料
型號: W3EG264M64EFSU265D4-MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
封裝: ROHS COMPLIANT, SO-DIMM-200
文件頁數(shù): 6/11頁
文件大?。?/td> 190K
代理商: W3EG264M64EFSU265D4-MG
W3EG264M64EFSU-D4
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
August 2005
Rev. 0
ADVANCED
DC ELECTRICAL CHARACTERISTICS
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VCC
2.3
2.7
V
I/O Supply Voltage
VCCQ
2.3
2.7
V
I/O Reference Voltage
VREF
0.49 × VCCQ
0.51 × VCCQ
V
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V
Input High (Logic 1) Voltage
VIH
VREF + 0.15
VCC + 0.3
V
Input Low (Logic 0) Voltage
VIL
-0.3
VREF - 0.15
V
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)VOH
-16.8
mA
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)VOL
16.8
mA
CAPACITANCE
PARAMETER
SYMBOL
MAX
UNITS
Input/Output Capacitance: DQ, DQS,DM
CI0
12
pF
Input Capacitance: Command and Address
CI1
47
pF
Input Capacitance: CK, CK#,
CI2
25
pF
Input Capacitance: CKE, S#
CI3
25
pF
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