參數(shù)資料
型號： W3EG2128M72AFSR335D3MG
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： DRAM
英文描述： 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
封裝： ROHS COMPLIANT, DIMM-184
文件頁數(shù)： 12/13頁
文件大小： 219K
代理商： W3EG2128M72AFSR335D3MG
W3EG2128M72AFSRxxxD3
8
White Electronic Designs
November 2004
Rev. 1
ADVANCED
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
AC Characteristics
335
262/263/265
202
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Notes
Access window of DQs from CK, CK#
tAC
-0.7
+0.7
-0.75
+0.75
-0.8
+0.8
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
Clock cycle time
CL=2.5
tCK (2.5)
6
13
7.5
13
8
13
ns
22
CL=2
tCK (2)
7.5
13
7.5
13
10
13
ns
22
DQ and DM input hold time relative to DQS
tDH
0.45
0.5
0.6
ns
14,17
DQ and DM input setup time relative to DQS
tDS
0.45
0.5
0.6
ns
14,17
DQ and DM input pulse width (for each input)
tDIPW
1.75
2
ns
17
Access window of DQS from CK, CK#
tDQSCK
-0.60
+0.60
-0.75
+0.75
-0.8
+0.8
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group, per access
tDQSQ
0.45
0.5
ns
13,14
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
tCK
Half clock period
tHP
tCH, tCL
ns
18
Data-out high-impedance window from CK, CK#
tHZ
+0.70
+0.75
+0.8
ns
8,19
Data-out low-impedance window from CK, CK#
tLZ
-0.70
-0.75
-0.8
ns
8,20
Address and control input hold time (fast slew rate)
tIHf
0.75
0.90
1.1
ns
6
Address and control input set-up time (fast slew rate)
tISf
0.75
0.90
1.1
ns
6
Address and control input hold time (slow slew rate)
tIHs
0.80
1
1.1
ns
6
Address and control input setup time (slow slew rate)
tISs
0.80
1
1.1
ns
6
Address and control input pulse width (for each input)
tIPW
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
16
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per access
tQH
tHP-tQHS
ns
13,14
Data hold skew factor
tQHS
0.55
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
70,000
40
120,000
40
120,000
ns
15
ACTIVE to READ with Auto precharge command
tRAP
15
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
70
ns
AUTO REFRESH command period
tRFC
72
75
ns
21
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