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參數(shù)資料
| 型號(hào)： | W3DG6418V75AD1I-SG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | ROHS COMPLIANT, SO-DIMM-144 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | W3DG6418V75AD1I-SG |
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
W3DG6418V-AD1
PRELIMINARY
PART NUMBERING GUIDE
W 3 D G 6418 V xx AD1 I- x G
WEDC
MEMORY
SDRAM
GOLD
DEPTH & BUS WIDTH
3.3 VOLTS
CLOCK SPEED (MHz)
10 = 100MHz @ CL = 2
7 = 133MHz @ CL = 2
75 = 133MHz @ CL = 3
PACKAGE144 PIN SO-DIMM
INDUSTRIAL TEMP
COMPONENT VENDOR NAME
(M = Micron)
(S = Samsung)
G = ROHS COMPLIANT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3DG6418V7AD1I-SG | 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| W3DG6418V10AD1I-SG | 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 |
| W3DG6418V7AD1-M | 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| W3DG6418V10AD1-MG | 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 |
| W3DG6418V10AD1I-S | 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3DG6418V75D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED |
| W3DG6418V75D2I-XX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64, SDRAM UNBUFFERED |
| W3DG6418V75D2XX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64, SDRAM UNBUFFERED |
| W3DG6418V75JD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED |
| W3DG6418V7AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED |
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