- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363881 > W29N102C (WINBOND ELECTRONICS CORP) 64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V電源供電的CMOS閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | W29N102C |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V電源供電的CMOS閃速存儲器) |
| 中文描述： | 64K的× 16位的CMOS 3.3V的快閃記憶體（64K的× 16位以3.3V的電源供電的閃速存儲器的CMOS） |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 253K |
| 代理商： | W29N102C |
Preliminary W29N102C
64K
×
16 CMOS 3.3V FLASH MEMORY
Publication Release Date: February 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29N102C is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29N102C results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 3.3-volt operations:
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 55/70/90 nS
Endurance: 1K/10K cycles (typ.)
Twenty-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
Low power consumption
Active current: 15 mA (typ.)
Standby current: 10
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29S201 | 128K×16bit CMOS Flash Memory With Synchronous Burst Read(具有同步脈沖讀模式的128K×16位CMOS閃速存儲器) |
| W3011 | 1 GHz Quadrature Modulator |
| W3013 | W3013 Indirect Quadrature Modulator with Gain Control |
| W3013BCL | W3013 Indirect Quadrature Modulator with Gain Control |
| W3020 | GSM Multiband RF Transceiver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W29NK50ZD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500 V - 0.11? - 29A TO-247 Fast Diode SuperMESH? MOSFET |
| W2A-1819 | 制造商:Nexans 功能描述:MULTI CONDUCTORS |
| W2A21A101J4T2A | 功能描述:電容器陣列與網(wǎng)絡(luò) 100v 100pF 5% Tol. RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
| W2A21A101KAT2A | 功能描述:電容器陣列與網(wǎng)絡(luò) 100v 100pF 20% Tol. RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
| W2A21A220KAT2A | 功能描述:電容器陣列與網(wǎng)絡(luò) 100v 22pF 10% Tol. RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。