參數(shù)資料
型號(hào)： W29EE011T90B
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 128K X 8 CMOS FLASH MEMORY
中文描述： 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
封裝： 8 X 20 MM, TSOP-32
文件頁(yè)數(shù)： 1/20頁(yè)
文件大?。?/td> 183K
代理商： W29EE011T90B
W29EE011
128K
×
8 CMOS FLASH MEMORY
Publication Release Date: July 1999
- 1 -
Revision A12
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
相關(guān)PDF資料
PDF描述
W29EE012 128K X 8 CMOS FLASH MEMORY
W29EE512Q-70 64K X 8 CMOS FLASH MEMORY
W29EE512Q-70B 64K X 8 CMOS FLASH MEMORY
W29EE512Q-90 64K X 8 CMOS FLASH MEMORY
W29EE512Q-90B 64K X 8 CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W29EE012 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE512 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY
W29EE512-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE512-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE512-90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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