參數(shù)資料
型號(hào)： W29D040C
廠商： WINBOND ELECTRONICS CORP
英文描述： 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲(chǔ)器)
中文描述： 為512k × 8位的CMOS閃存（為512k × 8位的CMOS閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/40頁(yè)
文件大?。?/td> 280K
代理商： W29D040C
W29D040C
512K x 8 CMOS FLASH MEMORY
Publication Release Date: January 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29D040C is an 4Mbit, 5-volt only CMOS flash memory organized as 512K
×
8 bits. For flexible
erase capability, the 4 Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (
×
8)
data appears on DQ7
DQ0. The device can be programmed and erased in-system with a standard 5V
power supply. A 12-volt V
PP
is not required. The unique cell architecture of the W29D040C results in fast
program/erase operations with extremely low current consumption (compared to other comparable 5-volt
flash memory products). The device can also be programmed and erased by using standard EPROM
programmers.
FEATURES
Single 5-volt write (program and erase)
operations
Fast byte-write operation
Chip programming cycle: 20 S (typ.)
Chip erase cycle: 1 S (typ.)
Sector erase architecture
8 uniform sectors of 64K bytes each
Any combination of sectors can be erased
Supports full chip erase
Sector protection
Sectors can be locked via programmer
Read access time: 55/70 ns
Typical program/erase cycles:
10K/100K
Twenty-year data retention
Low power consumption
Active current: 30 mA (typ.)
Standby current: 1
μ
A (typ.)
End of program detection
Software method: Toggle bit/Data polling
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin PLCC, 32-pin
TSOP and 32-pin PDIP
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