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參數(shù)資料
| 型號： | W28F321TB70L |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 |
| 封裝： | 7 X 7 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大小： | 372K |
| 代理商： | W28F321TB70L |
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W28F321BB/TB
32MBIT (2MBIT
× 16)
PAGE MODE DUAL WORK FLASH MEMORY
Publication Release Date: February 17, 2003
- 1 -
Revision A2
1. GENERAL DESCRIPTION
The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash
memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
range of applications. The product can be operated at VDD = 2.7V to 3.6V and VPP = 1.65V to 3.6V or
11.7V to 12.3V. Its low voltage operation capability greatly extends battery life for portable
applications.
The W28F321 provides high performance asynchronous page mode. It allows code execution directly
from Flash, thus eliminating time-consuming wait states. Furthermore, its configurative partitioning
architecture allows flexible dual work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides
separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and
data storage.
Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP
(One Time Program) block provides an area to store permanent code such as a unique number.
2. FEATURES
32M Density with 16 Bit I/O Interface
High-Performance Reads
70/25 nS 8-Word Page Mode
Configurative 4-Plane Dual Work
Flexible Partitioning
Read operations during Block Erase or (Page
Buffer) Program
Status Register for Each Partition
Low Power Operation
2.7V Read and Write Operations
VDDQ for Input/Output Power Supply Isolation
Automatic Power Savings Mode Reduces
ICCR in Static Mode
Enhanced Code + Data Storage
5 S Typical Erase/Program Suspends
OTP (One Time Program) Block
4-Word Factory-Programmed Area
4-Word User-Programmable Area
High Performance Program with Page Buffer
16-Word Page Buffer
5 S/ Word (Typ.) at 12V VPP
Operating Temperature
-40°C to +85°C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
Eight 4k-word Parameter Blocks
Sixty-three 32k-word Main Blocks
Top or Bottom Parameter Location
Enhanced Data Protection Features
Individual Block Lock and Block Lock-Down
with Zero-Latency
All blocks are locked at power-up or device
reset
Absolute Protection with VPP ≤ VPPLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29C010-70 | 128K X 8 FLASH 5V PROM, 70 ns, PDIP32 |
| W29C010-45 | 128K X 8 FLASH 5V PROM, 45 ns, PDIP32 |
| W29C020C-90Z | 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 |
| W29D040C-55C | 512K X 8 FLASH 5V PROM, 55 ns, PDIP32 |
| W29D040CT55C | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W28F641B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
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