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參數(shù)資料
| 型號： | W26B041H70LE |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 0K |
| 代理商： | W26B041H70LE |
Preliminary W26B041
Publication Release Date: April 22, 2002
- 9 -
Revision A1
DATA RETENTION CHARACTERISTICS
(TA (
°C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD for Data Retention
VDR
#CS1
≥ VDD -0.2V or
CS2
≤ 0.2V
1.5
-
V
Data Retention Current
IDDDR
#CS1
≥ VDD -0.2V or
CS2
≤ 0.2V, VDD = 3.0V
-
10
A
Chip Deselect to Data
Retention Time
TCDR
See data retention waveform
0
-
nS
Operation Recovery Time
TR
TRC*
-
nS
* Read Cycle Time
DATA RETENTION WAVEFORM
TCDR
VDD
TR
#CS1
VDR
1.5V
=
>
- 0.2V
DD
V
#CS1 =
>
0.9 x
DD
V
0.9 x
DD
V
CS2
0.2V
=
<
ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
OPERATING VOLTAGE
(V)
STANDBY CURRENT (
A)
OPERATING
TEMPERATURE
(
°C)
PACKAGE
W26B041B70LE
70
3V/10
A
-20 to 85
TFBGA
W26B041H70LE
70
3V/10
A
-20 to 85
TSOP(II)
W26B041B70LI
70
3V/10
A
-40 to 85
TFBGA
W26B041H70LI
70
3V/10
A
-40 to 85
TSOP(II)
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
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