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參數(shù)資料
| 型號： | W26A041B70LI |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | TFBGA-48 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 189K |
| 代理商： | W26A041B70LI |
Preliminary W26A041
Publication Release Date: April 19, 2002
- 9 -
Revision A1
DATA RETENTION CHARACTERISTICS
(TA (
°C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD for Data Retention
VDR
#CS1
≥ VDD-0.2V or
CS2
≤ 0.2V
1.5
-
V
Data Retention Current
IDDDR
#CS1
≥ VDD -0.2V or
CS2
≤ 0.2V, VDD = 3.0V
-
10
A
Chip Deselect to Data
Retention Time
TCDR See data retention waveform
0
-
nS
Operation Recovery Time
TR
TRC*
-
nS
* Read Cycle Time
DATA RETENTION WAVEFORM
TCDR
VDD
TR
#CS1
VDR
1.5V
=
>
- 0.2V
DD
V
#CS1 =>
0.9 x
DD
V
0.9 x
DD
V
CS2
0.2V
=
<
ORDERING INFORMATION
PART NO.
ACCESS
TIME
(nS)
OPERATING VOLTAGE
(V)
STANDBY CURRENT (
A)
OPERATING
TEMPERATURE
(
°C)
PACKAGE
W26A041B70LE
70
1.8V/10
A
-20 to 85
TFBGA
W26A041H70LE
70
1.8V/10
A
-20 to 85
TSOP(II)
W26A041B70LI
70
1.8V/10
A
-40 to 85
TFBGA
W26A041H70LI
70
1.8V/10
A
-40 to 85
TSOP(II)
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
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