參數(shù)資料
型號(hào): W25X40-VSSI
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 4M X 1 FLASH 2.7V PROM, PDSO8
封裝: 0.208 INCH, PLASTIC, SOIC-8
文件頁(yè)數(shù): 30/42頁(yè)
文件大小: 1198K
代理商: W25X40-VSSI
W25X10, W25X20, W25X40 AND W25X80
- 36 -
10.8 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION
SYMBOL
ALT
MIN
TYP
MAX
UNIT
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(4)
20
ns
Write Protect Hold Time After /CS High
tSHWL(4)
100
ns
/CS High to Power-down Mode
tDP(2)
3
s
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
s
/CS High to Standby Mode with Electronic
Signature Read
tRES2(2)
1.8
s
Write Status Register Cycle Time
tW
5
15
ms
Page Program Cycle Time
3.0V-3.6V VCC
2.7V-3.6V VCC
tPP
1.5
5
ms
Sector Erase Cycle Time (4KB)
tSE
150
300
ms
Block Erase Cycle Time (64KB)
tBE
1
2
s
Chip Erase Cycle Time W25X10 / W25X20
Chip Erase Cycle Time W25X40
Chip Erase Cycle Time W25X80
tCE
3
5
10
6
10
20
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set at 1.
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