參數(shù)資料
型號: W24L11Q-70L
元件分類: SRAM
英文描述: 128K X 8 STANDARD SRAM, 70 ns, PDSO32
封裝: TSOP-32
文件頁數(shù): 4/11頁
文件大?。?/td> 195K
代理商: W24L11Q-70L
Preliminary W24L11
- 2 -
TRUTH TABLE
CS1
CS2
OE
WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
X
L
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
L
H
Read
Data Out
IDD
L
H
X
L
Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to 70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 3.0V to 3.6V; VSS = 0V; TA (
°C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Input Low Voltage
VIL
-
-0.5
+0.6
V
Input High Voltage
VIH
-
+2.0
VDD +0.5
V
Input Leakage Current
ILI
VIN = VSS to VDD
-1
+1
A
Output Leakage Current
ILO
VI/O = VSS to VDD,
CS1
= VIH (min.) or
CS2 = VIL (max.) or
OE = VIH (min.) or
WE
= VIL (max.)
-1
+1
A
Output Low Voltage
VOL
IOL = +2.1 mA
-
0.4
V
Output High Voltage
VOH
IOH = -1.0 mA
2.2
-
V
Operating Power Supply
Current
IDD
CS1 = VIL (max.) and
CS2 = VIH (min.), I/O = 0 mA,
Cycle = min. Duty = 100%
-
40
mA
相關(guān)PDF資料
PDF描述
W24L11S-70L 128K X 8 STANDARD SRAM, 70 ns, PDSO32
W24V04S-85LI 512K X 8 STANDARD SRAM, 85 ns, PDSO32
W24V04B-85LE 512K X 8 STANDARD SRAM, 85 ns
W24V04Q-85LI 512K X 8 STANDARD SRAM, 85 ns, PDSO32
W25B20-VSNI-G 256K X 8 FLASH 2.7V PROM, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W24L11Q-70LE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
W24L11Q-70LL 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM
W24L11S-70L 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM
W24L11S-70LE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
W24L11S-70LL 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM