參數(shù)資料
型號(hào)： W19B160BTB7H
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 16 FLASH 2.7V PROM, 7 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48
文件頁(yè)數(shù)： 17/47頁(yè)
文件大小： 628K
代理商： W19B160BTB7H
W19B160BT/B DATA SHEET
- 24 -
8.8 Command Definitions
BUS CYCLES (2-5)
FIRST
SECOND
THIRD
FOURTH
FIFTH
SIXTH
COMMAND
SEQUENCE
(1)
CYCLE
ADDR DATA ADDR DATA ADDR DATA ADDR DATA ADDR DATA ADDR DATA
Read (note 6)
1
RA
RD
Reset (note 7)
1
XXX
F0
Word
555
2AA
555
Normal
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Word
555
2AA
555
Unlock pass
Byte
3
AAA
AA
555
55
AAA
20
Unlock bypass program
2
XXX
A0
PA
PD
Unlock bypass reset
2
XXX
90
XXX
F0
Word
555
2AA
555
Manufacturer
Code
Byte
4
AAA
AA
555
55
AAA
90
X00
DA
Word
555
2AA
555
X01
Device
Code
Byte
4
AAA
AA
555
55
AAA
90
x02
(note11
)
XX00
Word
555
2AA
555
(SA) X02
XX01
00
AUTO
SELECT(note8)
Sector Protect
Verify (note 9)
Byte
4
AAA
AA
555
55
AAA
90
(SA) X04
01
Word
55
Common Flash
Interface (CFI)
Query (note 10)
Byte
1
AA
98
Legend:
X = Don’t Care
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the #WE or #CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of #WE or #CE pulse, whichever happens first.
RD = Data read from location RA during read operation.
SA = Address of the sector to be verified (in auto select mode) or erased. Address bits A19-A12 uniquely select any sector.
Notes:
1. See Bus Operations Table for details.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the auto select command sequence, all bus cycles are write cycles.
4. Data bits DQ15-DQ8 are don’t care for unlock and command cycle.
5. Unless otherwise noted, address bits A19-A11 are don’t cares for unlock and command cycles.
6. No unlock or command cycles required when reading array data.
7. When device is in the auto select mode, the reset command is required to return to reading array data, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the auto select command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W19B160BTBH7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTBM7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160BTT7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation
W19B160TB7H7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
W19B160TB7M7H 制造商:WINBOND 制造商全稱:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory
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