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參數(shù)資料
| 型號： | W18NB40 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
| 中文描述： | N溝道400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 107K |
| 代理商： | W18NB40 |
1/7
PRELIMINARY DATA
June 2002
STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19
- 18.4 A TO-247/ISOWATT218
PowerMesh MOSFET
(1)I
SD
<18.4A, di/dt<200A/μ, V
DD
<V
(BR)DSS
,TJ<T
JMAX
INTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 0.19
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26
< 0.26
18.4 A
12.4 A
Parameter
Value
Unit
STW18NB40
STH18NB40FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
400
V
400
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
18.4
12.4
A
11.6
7.8
A
Drain Current (pulsed)
73.6
73.6
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
190
80
W
1.52
4.5
0.64
4.5
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
-
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-247
ISOWATT218
1
2
3
1
2
3
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