參數(shù)資料
型號: VTT1015
廠商: PerkinElmer Inc.
英文描述: .050 NPN Phototransistors
中文描述: .050 NPN光電晶體管
文件頁數(shù): 1/1頁
文件大小: 22K
代理商: VTT1015
102
.050" NPN Phototransistors
TO-46 Flat Window Package
VTT1015, 16, 17
PACKAGE DIMENSIONS
inch (mm)
CASE 1
TO-46 (FLAT WINDOW)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a flat lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection fromhostile
environments. The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE10xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
MaximumTemperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
MaximumCurrent:
Lead Soldering Temperature:
(1.6 mmfromcase, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also typical curves, pages 91-92)
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emtter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
θ
1/2
l
C
l
CEO
V
BR(CEO)
V
BR(ECO)
V
CE(SAT)
t
R
/t
F
mA
H
fc (mW/cm
2
)
V
CE
= 5.0 V
H = 0
l
C
= 100 μA
H = 0
l
E
= 100 μA
H = 0
l
C
= 1.0 mA
H = 400 fc
l
C
= 1.0 mA
R
L
= 100
Min.
Max.
(nA)
Max.
V
CE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
μsec, Typ.
Typ.
VTT1015
VTT1016
VTT1017
0.4
1.0
2.5
100 (5)
100 (5)
100 (5)
25
25
25
20
20
10
40
30
20
6.0
6.0
4.0
0.40
0.40
0.40
5.0
5.0
8.0
±35°
±35°
±35°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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