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參數(shù)資料
| 型號(hào)： | VTM3-C15E-12M000 |
| 廠商： | VECTRON INTERNATIONAL |
| 元件分類： | TCVCXO, sine |
| 英文描述： | TCVCXO, CLIPPED SINE OUTPUT, 12 MHz |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, SMD, 6 PIN |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | VTM3-C15E-12M000 |
VTM3 Data Sheet
Vectron International 267 Lowell Rd, Hudson NH 03051
Tel: 1-88-VECTRON-1
e-mail vectron@vectron.com
7
Handling Precautions
Although ESD protection circuitry has been designed into the the VTM3, proper precautions should be
taken when handling and mounting. VI employs a Human Body Model and a Charged-Device Model
(CDM) for ESD susceptibility testing and design protection evaluation. ESD thresholds are dependent on
for the CDM, a standard HBM of resistance = 1.5kohms and capacitance = 100pF is widely used and
therefore can be used for comparison purposes.
Table 6. ESD Ratings
Model
Minimum
Conditions
Human Body Model
1000
MIL-STD-883 Method 3115
Charged Device Model
1000
JESD 22-C101
Suggested IR profile
Devices are built using lead free epoxy and can also be subjected to standard lead free IR reflow
conditions, Table 7 shows max temperatures and lower temperatures can also be used e.g. peak
temperature of 220C.
Table 7. Reflow Profile (IPC/JEDEC J-STD-020)
Parameter
Symbol
Value
PreHeat Time
t S
60 sec Min, 180 sec Max
Ramp Up
R UP
3
oC/sec Max
Time Above 217
oC
t L
60 sec Min, 150 sec Max
Time To Peak Temperature
t AMB-P
480 sec Max
Time At 260
oC (max)
t P
10 sec Max
Time At 240 °C (max)
tp2
60 sec Max
Ramp Down
R DN
6
oC/sec Max
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