- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359442 > VTE1291W-1 (PerkinElmer Inc.) GaAlAs Infrared Emitting Diodes PDF資料下載
參數(shù)資料
| 型號： | VTE1291W-1 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | GaAlAs Infrared Emitting Diodes |
| 中文描述： | 紅外發(fā)光二極管的GaAIAs |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 32K |
| 代理商： | VTE1291W-1 |
118
GaAlAs Infrared Emitting Diodes
T-1 (5 mm) Plastic Package — 880 nm
VTE1291-1, 1291-2
PACKAGE DIMENSIONS
inch (mm)
CASE 26
CHIP SIZE: .015" x .015"
T-1 (5 mm)
DESCRIPTION
This narrow beamangle 5 mmplastic packaged emtter contains a double wirebonded, GaAlAs, 880 nmIRED chip. This cost effective
design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarmapplications
(UL file #S3506).
ABSOLUTE MAXIMUMRATINGS @ 25°C
(unless otherwise noted)
MaximumTemperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
MaximumContinuous Current:
Derate above 30°C:
Peak Forward Current, 10 μs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
MaximumReverse Voltage:
MaximumReverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise: 1.0 μs
Fall: 1.0 μs
Lead Soldering Temperature:
(1.6 mmfromcase, 5 seconds max.)
5.0V
10 μA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
θ
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1291-1
VTE1291-2
2.5
5.0
3.3
6.5
36
36
6.4
6.4
32
65
20
25
100
100
1.5
1.5
2.0
2.0
±12°
±12°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
相關PDF資料 |
PDF描述 |
|---|---|
| VTE1295 | GaAlAs Infrared Emitting Diodes |
| VTE3324LA | XTAL MTL SMT HC49/USM |
| VTE3372LA | GaAlAs Infrared Emitting Diodes |
| VTE3373LA | GaAlAs Infrared Emitting Diodes |
| VTE7173 | GaAlAs Infrared Emitting Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VTE1291W-1H | 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE, Peak Wavelength:880nm, Forward Current If(AV):100mA, Rise Time:1s, Fall Time tf:1s, Radiant Intensity:16mW/Sr, Viewing Angle:25, Forward Voltage VF Max:1.5V, Diode Case Style:T-1 3/4 , RoHS Compliant: Yes 制造商:PerkinElmer Inc 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE, Peak Wavelength:880nm, Forward Current |
| VTE1291W-2 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes |
| VTE1295 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes |
| VTE1295H | 制造商:EG & G VACTEC 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE, Peak Wavelength:880nm, Forward Current 制造商:PerkinElmer Inc 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE, Peak Wavelength:880nm, Forward Current |
| VTE12SC12 | 功能描述:線性和開關式電源 12V TO 12V RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風格:Rack 長度: 寬度: 高度: |
發(fā)布緊急采購，3分鐘左右您將得到回復。