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參數(shù)資料
| 型號(hào)： | VSML3710-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 940nm 2-Pin PLCC T/R |
| 中文描述： | Infrared Emitters 60 Degree 170mW |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 136K |
| 代理商： | VSML3710-GS08 |
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81300
Rev. 1.4, 03-Nov-09
VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Note
T
amb
= 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
T
amb
= 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
160
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
Acc. figure 11, J-STD-020
J-STD-051, soldered on PCB
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
50
60
70
80
90
100
21343
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
r
t
f
t
f
d
MIN.
TYP.
1.35
2.6
- 1.8
MAX.
1.6
3
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
100
25
8
60
35
- 0.6
± 60
940
50
0.2
800
500
800
500
0.44
Radiant intensity
4
20
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 1 A
I
F
= 20 mA
I
F
= 1 A
Rise time
Fall time
Virtual source diameter
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