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參數(shù)資料
| 型號： | VSMG3700-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 850nm 2-Pin PLCC T/R |
| 中文描述： | Infrared Emitters 60 Degree 170mW 850nm |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 121K |
| 代理商： | VSMG3700-GS08 |
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81471
Rev. 1.4, 06-Oct-10
VSMG3700
Vishay Semiconductors
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
=
100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
acc. figure 8, J-STD-020
Thermal resistance junction/ambient
J-STD-051, soldered on PCB
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
180
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
= 100 μs
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
80
90
100
21339
T
amb
- Ambient Temperature (°C)
P
V
s
i
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
21340
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
d
MIN.
TYP.
1.5
2.3
- 1.8
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Forward voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Temperature coefficient of V
F
Reverse current
Junction capacitance
10
125
10
100
40
- 0.35
± 60
850
40
0.25
20
13
18
0.44
Radiant intensity
6
22
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
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