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參數(shù)資料
| 型號： | VSMF3710-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電檢測器 |
| 英文描述： | Infrared LED, 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm, GREEN, PLASTIC, LCC-2 |
| 中文描述： | Infrared Emitters 60 Degree 170mW 890nm |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 142K |
| 代理商： | VSMF3710-GS08 |
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81241
Rev. 1.7, 03-Nov-09
VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
Note
T
amb
= 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
T
amb
= 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
160
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
Acc. figure 8, J-STD-020
J-STD-051, soldered on PCB
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
50
60
70
80
90
100
21343
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
d
MIN.
TYP.
1.4
2.3
- 1.8
MAX.
1.6
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
10
125
10
100
40
- 0.35
± 60
890
40
0.25
30
30
12
0.44
Radiant intensity
6
22
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VSMF3710-GS08 | 制造商:Vishay Intertechnologies 功能描述:IR EMIT HI SPEED 870NM PLCC2 |
| VSMF3710-GS18 | 功能描述:紅外發(fā)射源 RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| VSMF4710 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| VSMF4710_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| VSMF4710-GS08 | 功能描述:紅外發(fā)射源 60 Degree 170mW RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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