參數(shù)資料
型號(hào)： VSLB3940
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電檢測器
英文描述： Infrared LED, 3 mm, 1 ELEMENT, INFRARED LED, 940 nm, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
中文描述： Infrared Emitters High Speed Emitter 5V 160mW 940nm 22Deg
文件頁數(shù)： 2/5頁
文件大?。?/td> 98K
代理商： VSLB3940
VSLB3940
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 23-Aug-11
2
Document Number: 81931
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
50
60
70
80
90
100
21317
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
amb
- Ambient Temperature (°C)
21318
I
F
R
thJA
= 300 K/W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
MIN.
1.15
TYP.
1.35
2.2
- 1.5
- 1.1
MAX.
1.6
UNIT
V
V
mV/K
mV/K
μA
Forward voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
I
F
= 100 mA
Temperature coefficient of V
F
Reverse current
10
Junction capacitance
C
J
70
pF
Radiant intensity
I
e
I
e
e
TK
e
TK
e
p
TK
p
t
r
t
f
d
32
65
650
40
- 1.1
- 0.51
± 22
940
25
0.25
15
15
2
110
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm
ns
ns
mm
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Virtual source diameter
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
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