參數(shù)資料
型號： VSKC166/12PBF
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： 參考電壓二極管
英文描述： 165 A, 1200 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT, CERAMIC, INT-A-PAK-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 202K
代理商： VSKC166/12PBF
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94357
2
Revision: 22-Apr-08
VSK.166, .196, .236..PbF Series
Vishay High Power Products
Standard Recovery Diodes, 165 A to 230 A
(New INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
UNITS
Maximum average on-state
current at case temperature
IF(AV)
180° conduction, half sine wave
165
195
230
A
100
°C
Maximum RMS on-state current
IF(RMS)
260
305
360
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
IFSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial TJ = TJ
maximum
4000
4750
5500
t = 8.3 ms
4200
4980
5765
t = 10 ms
100 % VRRM
reapplied
3350
4000
4630
t = 8.3 ms
3500
4200
4850
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
80
113
151
kA2s
t = 8.3 ms
73
103
138
t = 10 ms
100 % VRRM
reapplied
56
80
107
t = 8.3 ms
52
73
98
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
798
1130
1516
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ maximum
0.73
0.69
0.7
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ maximum
0.88
0.78
0.83
Low level value on-state
slope resistance
rt1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ maximum
1.5
1.3
1.2
m
Ω
High level value on-state
rt2
(I >
π x I
F(AV)), TJ maximum
1.26
1.2
1.07
Maximum forward voltage drop
VFM
IFM = π x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.43
1.38
1.46
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
TJ = 150 °C
20
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted,
t = 1 s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.2
0.16
0.14
K/W
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
0.05
Mounting
torque ± 100 %
IAP to heatsink
A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
4 to 6
Nm
busbar to IAP
Approximate weight
200
g
7.1
oz.
Case style
New INT-A-PAK
相關(guān)PDF資料
PDF描述
VSKC196/08PBF 195 A, 800 V, SILICON, RECTIFIER DIODE
VSKC236/14PBF 230 A, 1400 V, SILICON, RECTIFIER DIODE
VSKC250-04 250 A, 400 V, SILICON, RECTIFIER DIODE
VSKC250-12 250 A, 1200 V, SILICON, RECTIFIER DIODE
VSKC270-04 270 A, 400 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VSKC166-16PBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules)
VSKC236/12PBF 制造商:Vishay Intertechnologies 功能描述:Diode Switching 1.2KV 230A 3-Pin INT-A-PAK
VSKC250-08 功能描述:整流器 800 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
VSKC250-12 功能描述:整流器 1200 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
VSKC250-16 功能描述:整流器 1600 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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