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參數(shù)資料
| 型號(hào)： | VSC7940W |
| 廠商： | VITESSE SEMICONDUCTOR CORP |
| 元件分類： | 其它接口 |
| 英文描述： | SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control |
| 中文描述： | SPECIALTY INTERFACE CIRCUIT, UUC48 |
| 封裝： | DIE-48 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 167K |
| 代理商： | VSC7940W |
VITESSE
Preliminary Data Sheet
VSC7940
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Page 4
G52357-0, Rev 3.2
05/11/01
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano
Camarillo, CA 93012
Tel: (800) VITESSE
FAX: (805) 987-5896
Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Bare Die Pad Descriptions
Figure 1: Pad Assignments
VSC7940
Pad 8
CLK-
Pad 7
CLK+
Pad 6
VCC1
Pad 5
GND1
Pad 4
VCC1
Pad 3
DATA-
Pad 2
DATA+
Pad 1
VCC1
(Pin 1)
(Pin 2)
(Pin 3)
(Pin 4)
(Pin 6)
(Pin 7)
(Pin 8)
(Pin 9)
(Pin 10)
(Pin 11)
(Pin 12)
(Pin 13)
(Pin 15)
(Pin 14)
(Pin 16)
(Pin 17)
(Pin 32)
(Pin 31)
(Pin 30)
(Pin 29)
(Pin 28)
(Pin 26)
(Pin 27)
(Pin 25)
(Pin 5)
(Pin 18)
(Pin 19)
(Pin 20)
(Pin 21)
(Pin 22)
(Pin 23)
(Pin 24)
Pad 48
GND1
Pad 47
GND2
Pad 46
VCC2
Pad 45
BIASMAX
20
μ
m
(0.0008")
2233
μ
m
(0.0879")
1773
μ
m (0.0698")
75
μ
m
(0.0030")
Pad 44
MODSET
Pad 43
GND2
Pad 42
APCSET
Pad 41
RESERVED
Pad 40
GND2
Pad 39
PB_GND
Pad 38
GND3
Pad 37
PB_GND
Pad 36
CAPC
Pad 35
VCC3
Pad 34
GND3
Pad 10
GND1
Pad 11
LATCH
Pad 12
ENABLE
Pad 13
DISABLE
Pad 14
GND1
Pad 15
BIASMON
Pad 16
MODMON
Pad 17
FAIL
Pad 18
GND4
Pad 19
PB_GND
Pad 20
APCFILT
Pad 21
GND4
Pad 22
VCC4
Pad 23
BIAS
Pad 9
VCC1
Pad 25
VCC4
Pad 26
DB_OUT+
Pad 27
OUT+
Pad 28
OUT-
Pad 29
DB_OUT-
Pad 30
VCC4
Pad 31
GND4
Pad 32
GND3
Pad 33
MD
Pad 24
PB_GND1
Die Size:
Die Thickness:
Pad Pitch:
Pad to Pad Clearance:
Pad Passivation Opening: 95
μ
m x 95
μ
m (0.0037" x 0.0037")
μ
1773
μ
m x 2233
μ
m (0.0698" x 0.0879")
625
μ
m (0.0246")
115
μ
m (0.0045")
20
μ
m (0.0008")
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