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參數(shù)資料
| 型號： | VS28F016SV |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit(1MBitx16) FLASHFILE MEMORY(16M位FLASHFILE存儲器) |
| 中文描述： | 16兆位（1MBitx16）FLASHFILE記憶（1,600位FLASHFILE存儲器） |
| 文件頁數(shù)： | 1/50頁 |
| 文件大?。?/td> | 612K |
| 代理商： | VS28F016SV |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
December 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 271312-002
VS28F016SV, MS28F016SV
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile
TM
MEMORY
Y
VS28F016SV
D
b
40
§
C to
a
125
§
C
D SE2 Grade
Y
MS28F016SV
D
b
55
§
C to
a
125
§
C
D QML Certified
D SE1 Grade
Y
SmartVoltage Technology
D User-Selectable 3.3V or 5V V
CC
D User-Selectable 5V or 12V V
PP
Y
Three Voltage/Speed Options
D 80 ns Access Time, 5.0V
g
5%
D 85 ns Access Time, 5.0V
g
10%
D 120 ns Access Time, 3.3V
g
10%
Y
1 Million Erase Cycles per Block
Typical
Y
14.3 MB/sec Burst Write Transfer Rate
Y
Configurable x8 or x16 Operation
Y
56-Lead SSOP Plastic Package
Y
Backwards-Compatible with VE28F008,
M28F008 and 28F016SA Command Set
Y
Revolutionary Architecture
D Multiple Command Execution
D Write During Erase
D Command Super-Set of the Intel
VE28F008, M28F008
D Page Buffer Write
Y
Multiple Power Savings Modes
Y
Two 256-Byte Page Buffers
Y
State-of-the-Art 0.6
m
m ETOX
TM
IV
Flash Technology
Intel’s VS/MS28F016SV, 16-Mbit FlashFiIe
TM
Memory is the latest member of Intel’s high density, high per-
formance memory family for the Industrial, Special Environment, and Military markets. Its user selectable V
CC
and V
PP
(SmartVoltage Technology), innovative capabilities, 100% compatibility with the VE28F008 and
M28F008, multiple power savings modes, selective block locking, and very fast read/write performance make
it the ideal choice for any applications that need a high density and a wide temperature range memory device.
The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow
rotating media or battery backed up memory arrays.
With two product grades (SE1:
b
55
§
C to
VS/MS28F016SV is perfect for the non-PC industries like Telecommunications, Embedded/Industrial, Auto-
motive, Navigation, Wireless Communication, Commercial Aircraft, and all Military programs.
a
125
§
C, and SE2:
b
40
§
C to
a
125
§
C) available, the
The VS/MS28F016SV’s x8/x16 architecture allows for the optimization of the memory to processor interface.
The flexible block locking options enable bundling of executable application software in a Resident Flash Array
(RFA), PCMCIA Memory or ATA Cards or Memory modules.
The VS/MS28F016SV is offered in a 56-lead SS0P (Shrink Small Outline Package) and is manufactured on
Intel’s 0.6
m
m ETOX
TM
IV process technology.
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