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參數(shù)資料
| 型號(hào)： | VR4J |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
| 中文描述： | 東芝快速恢復(fù)二極管硅擴(kuò)散型高速整流器應(yīng)用（快速恢復(fù)） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | VR4J |
TVR4J,TVR4N
2002-09-18
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Repetitive Peak Reverse Voltage: V
RRM
= 600, 1000 V
Average Forward Current: I
F (AV)
= 1.2 A (Ta = 55°C)
Reverse Recovery Time: t
rr
= 20 μs
Plastic Mold Type.
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
TVR4J
600
Repetitive peak
reverse voltage
TVR4N
V
RRM
1000
V
Average forward current (Ta 55°C )
I
F (AV)
1.2
A
Peak one cycle surge forward current
(non repetitive)
I
FSM
100 (50 Hz)
A
Junction temperature
T
j
40 to 150
°C
Storage temperature range
T
stg
40 to 150
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
FM
I
FM
5 A
1.2
V
Repetitive peak reverse current
I
RRM
V
RRM
Rated
10
A
Reverse recovery time
t
rr
I
F
20 mA, I
R
1 mA
20
s
Thermal resistance (junction to ambient)
R
th (j-a)
DC
80
°C/W
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Type Code Lot No.
Cathode Mark
Color: Silver
Month (starting from alphabet A)
Year (last number of the christian era)
Code
Type
VR4J
TVR4J
VR4N
TVR4N
V
4
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