參數(shù)資料
型號: VQ3001J
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel/P-Channel Enhancement-Mode MOSFET Transistor Array(最小漏源擊穿電壓±30V的N/P溝道增強(qiáng)型MOSFET晶體管陣列)
中文描述: N-Channel/P-Channel增強(qiáng)型MOSFET晶體管陣列(最小漏源擊穿電壓± 30V的的N / P系列溝道增強(qiáng)型MOSFET的晶體管陣列)
文件頁數(shù): 2/6頁
文件大?。?/td> 82K
代理商: VQ3001J
VQ3001J/3001P
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specifications
a
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
V
GS
= 0 V, I
D
= –10 A
55
30
–55
–30
V
Gate-Source
Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.5
0.8
2.5
V
DS
= V
GS
, I
D
= –1 mA
–3.1
–2
–4.5
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
100
nA
V
DS
= 0 V, V
GS
=
20 V, T
J
= 125 C
500
500
V
DS
= 24 V, V
GS
= 0 V
10
Zero-Gate
Voltage Drain Current
I
DSS
V
DS
= –24 V, V
GS
= 0 V
–10
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
500
V
DS
= –24 V, V
GS
= 0 V, T
J
= 125 C
–500
I
D(on)
V
DS
= 10 V, V
GS
= 12 V
3
2
A
V
DS
= –10 V, V
GS
= –12 V
–2
–1.5
V
GS
= 5 V, I
D
= 0.2 A
1.2
1.75
V
GS
= 12 V, I
D
= 1 A
0.81
1.0
Drain-Source
On-State Resistance
c
r
DS(on)
V
GS
= –12 V, I
D
= –1 A
1.6
2.0
V
GS
= 12 V, I
D
= 1 A, T
J
= 125 C
1.65
2.0
V
GS
= –12 V, I
D
= –1 A, T
J
= 125 C
2.7
4.0
Forward Transconductance
c
g
fs
V
DS
= 10 V, I
D
= 0.5 A
500
250
mS
V
DS
= –10 V, I
D
= –0.5 A
390
200
Input Capacitance
C
iss
38
110
N Channel
N-Channel
60
150
Output Capacitance
C
oss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
33
110
pF
P-Channel
15 V V
V
DS
= –15 V, V
GS
= 0 V, f = 1 MHz
0 V f
45
100
Reverse Transfer Capacitance
C
rss
8
35
15
60
Turn On Time
Turn-On Time
t
ON
N-Channel
9
30
V
DD
= 15 V R
V, R
L
= 23
0.6 A, V
GEN
= 10 V, R
G
= 25
I
D
19
30
ns
Turn Off Time
Turn-Off Time
t
OFF
P-Channel
–0.6 A, V
GEN
= –10 V, R
G
= 25
14
30
V
DD
= 15 V R
V, R
L
= 23
I
D
16
30
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
VNDQ03/VPEA03
2%.
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