參數(shù)資料
型號(hào): VQ2004J
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V,夾斷電流-0.41A的P溝道增強(qiáng)型MOSFET)
中文描述: P通道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓- 60V的,夾斷電流,0.41A的P溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 2/4頁
文件大?。?/td> 74K
代理商: VQ2004J
VQ2004J
2
Siliconix
P-37655—Rev. B, 25-Jul-94
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–60
–110
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–2
–3.4
–4.5
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
30 V
100
nA
T
J
= 125 C
500
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –60 V, V
GS
= 0 V
–10
A
V
DS
= –48 V, V
GS
= 0 V, T
J
= 125 C
–500
On-State Drain Current
c
I
D(on)
V
DS
= –10 V, V
GS
= –10 V
–1
–2
A
Drain Source On Resistance
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= –10 V, I
D
= –1 A
2.5
5
T
J
= 125 C
4.4
8
Forward Transconductance
c
g
fs
V
DS
= –10 V, I
D
= –0.5 A
200
325
mS
Common Source Output Conductance
c
g
os
V
DS
= –7.5 V, I
D
= –0.1 A
0.45
Dynamic
Input Capacitance
C
iss
V
DS
= –25 V V
GS
= 0 V
f = 1 MHz
75
150
Output Capacitance
C
oss
40
60
pF
Reverse Transfer Capacitance
C
rss
18
25
Switching
d
Turn On Time
Turn-On Time
t
d(on)
11
15
t
r
–25
–0 5
–0.5
30
40
ns
Turn-Off Time
t
d(off)
20
30
t
f
20
30
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDV10
2%.
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