參數(shù)資料
型號(hào): VP2204N2
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 1.6A I(D) | TO-39
中文描述: 晶體管| MOSFET的| P通道| 40V的五(巴西)直| 1.6AI(四)| TO - 39封裝
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 456K
代理商: VP2204N2
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
V
G
(
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
400
C
0
-10
-20
-30
-40
300
200
0
0
-2
-4
-6
-8
-10
-10
-8
-6
-4
-2
0
-50
0
50
100
150
1.1
1.0
5
2
1.2
1.1
1.0
0.9
0.8
0.7
-10
-8
-6
-4
-2
0
2
4
6
8
10
-50
0
50
100
150
310 pF
V
GS
= -10V
125
°
C
0
-2
-4
-6
-10
-8
0
3
4
f = 1MHz
0.9
725 pF
2.0
1.6
1.2
0.8
0.4
0
V
(th)
@ -1mA
R
DS(ON)
@ -10V, -3.5A
25
°
C
100
0
1
V
GS
= -5V
R
D
B
D
T
j
(
°
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
DS
= -25V
T
j
(
°
C)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
R
D
(
T
A
= -55
°
C
Q
G
(nanocoulombs)
V
G
V
DS
(volts)
C
ISS
C
OSS
C
RSS
V
DS
=
-40V
V
DS
= -10V
VP2206
Typical Performance Curves
相關(guān)PDF資料
PDF描述
VP2206N2 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | TO-39
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