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參數(shù)資料
| 型號(hào)： | VP1304 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | VP1304 |
7-251
9
BV
DSS
/
BV
DGS
R
DS(ON)
(max)
I
D(ON)
(min)
Order Number / Package
TO-92
-40V
25
25
25
-0.25A
VP1304N3
-60V
-0.25A
VP1306N3
-100V
-0.25A
VP1310N3
VP1304
VP1306
VP1310
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
TO-92
S G D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP1304N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1310N8 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | TO-243AA |
| VP1310 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-100V,25Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| VP1316N2 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| VP1316N3 | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP1304N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1306 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1306N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1310 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP1310N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
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