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參數(shù)資料
| 型號： | VP1008L |
| 廠商： | Siliconix |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistors |
| 中文描述： | P溝道增強模式場效應晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | VP1008L |
VP0808B/L/M, VP1008B/L/M
4
Siliconix
P-37655—Rev. B, 25-Jul-94
Typical Characteristics (25 C Unless Otherwise Noted)
–15.0
–12.5
–10.0
0
0
100
500
–7.5
–5.0
200
300
400
–2.5
–80 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
10
50
100
100
10
1
20
200
160
120
0
0
–10
–50
80
40
–20
–30
–40
–10
–1
–0.01
–1.0
–1.5
–4.5
–0.1
–2.0
–2.5
–3.0
–3.5
–4.0
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Drive Resistance Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
–55 C
Q
g
– Total Gate Charge (pC)
125 C
–
I
D
C
–
V
G
t
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
I
D
= –0.5 A
V
DS
= –50 V
V
DD
= –25 V
R
L
= 50
V
GS
= 0 to –10 V
I
D
= –500 mA
t
d(on)
t
d(off)
t
r
t
f
T
J
= 150 C
25 C
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
V
DS
= –5 V
R
G
– Gate Resistance ( )
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VP1008L-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 100V 0.28A 3-Pin TO-226AA T/R |
| VP1008M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 370MA I(D) | TO-237 |
| VP100-B11XX-00000-XASS1 | 制造商:Carling Technologies 功能描述:V-SERIES ILLUMINATED PLUG - Bulk |
| VP101 | 制造商:ZARLINK 制造商全稱:Zarlink Semiconductor Inc 功能描述:30/50MHz 8-BIT CMOS VIDEO DAC |
| VP1-0102 | 制造商:COOPER_ELEC 功能描述: 制造商:COOPER BUSSMANN 功能描述:Ind Power Wirewound 6.5uH 20% Ferrite 850mA T/R 制造商:COOPER BUSSMANN 功能描述:Inductor Power Wirewound 6.5uH 20% Ferrite 850mA 145mOhm DCR T/R |
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