參數(shù)資料
型號： VO4257H-X006
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： VO4257, VO4258 Optocoupler, Phototriac Output, High dV/dt, Low Input Current
中文描述： Triac & SCR Output Optocouplers Non Zero Cross Photo Triac 700V 2mA
文件頁數(shù)： 3/7頁
文件大小： 123K
代理商： VO4257H-X006
VO4257, VO4258
Vishay Semiconductors
www.vishay.com
Rev. 1.6, 29-Feb-12
3
Document Number: 84635
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
P
diss
100
mW
Output power dissipation
P
diss
500
mW
Total power dissipation
P
tot
600
mW
Maximum LED junction temperature
T
jmax.
125
°C
Maximum output die junction temperature
T
jmax.
125
°C
Thermal resistance, junction emitter to board
θ
JEB
150
°C/W
Thermal resistance, junction emitter to case
θ
JEC
139
°C/W
Thermal resistance, junction detector to board
θ
JDB
78
°C/W
Thermal resistance, junction detector to case
θ
JDC
103
°C/W
Thermal resistance, junction emitter to junction detector
θ
JED
496
°C/W
Thermal resistance, case to ambient
θ
CA
3563
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 10 mA
Reverse current
V
R
= 6 V
Input capacitance
V
F
= 0 V, f = 1 MHz
OUTPUT
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
I
R
C
I
1.2
0.1
40
1.4
10
V
μA
pF
Repetitive peak off-state voltage
I
DRM
= 100 μA
VO4257D/H/M
VO4258D/H/M
V
DRM
V
DRM
I
DRM
V
TM
I
TM
700
800
V
V
μA
V
mA
Off-state current
On-state voltage
On-current
Critical state of rise of off-state
voltage
COUPLER
V
D
= V
DRM
I
T
= 300 mA
PF = 1, V
T(RMS)
= 1.7 V
100
3
300
V
D
= 0.67 V
DRM
, T
J
= 25 °C
dV/dt
cr
5000
V/μs
LED trigger current,
current required to latch output
V
D
= 3 V
VO4257D
VO4257H
VO4257M
VO4258D
VO4258H
VO4258M
I
FT
I
FT
I
FT
I
FT
I
FT
I
FT
C
IO
1.6
2
3
1.6
2
3
mA
mA
mA
mA
mA
mA
pF
Capacitance (input to output)
f = 1 MHz, V
IO
= 0 V
0.8
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
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