參數(shù)資料
型號(hào)： VNQ830P
英文描述： QUAD CHANNEL HIGH SIDE DRIVER
中文描述： 四通道高邊驅(qū)動(dòng)器
文件頁(yè)數(shù)： 1/20頁(yè)
文件大小： 309K
代理商： VNQ830P
M
October 2003 - Revision 1.2 (Working document)
1/20
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
- V
CC
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
Value
41
- 0.3
- 200
Unit
V
V
mA
A
A
mA
mA
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
(L=1.5mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=9A)
Power dissipation (per island) at T
lead
=25°C
Junction Operating Temperature
Storage Temperature
Internally Limited
- 6
+/- 10
+/- 10
V
ESD
4000
4000
5000
5000
V
V
V
V
E
MAX
85
mJ
P
tot
T
j
T
stg
6.25
W
°C
°C
Internally Limited
- 55 to 150
VNQ830P
QUAD CHANNEL HIGH SIDE DRIVER
(*) Per each channel
I
CMOS COMPATIBLE INPUTS
I
OPEN DRAIN STATUS OUTPUTS
I
ON STATE OPEN LOAD DETECTION
I
OFF STATE OPEN LOAD DETECTION
I
SHORTED LOAD PROTECTION
I
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
I
LOSS OF GROUND PROTECTION
I
VERY LOW STAND-BY CURRENT
I
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ830P is a quad HSD formed by
assembling two VND830 chips in the same SO-28
package. The VND830 is a monolithic device
made by using
|
STMicroelectronics VIPower M0-3
Technology. The VNQ830 is intended for driving
any type of multiple loads with one side connected
to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload.
The device detects open load condition both in on
and off state. Output shorted to V
is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
TYPE
R
DS(on)
65 m
(*)
I
OUT
6 A (*)
V
CC
36 V
VNQ830P
SO-28 (DOUBLE ISLAND)
ORDER CODES
TUBE
VNQ830P
PACKAGE
SO-28
T&R
VNQ830P13TR
(**) See application schematic at page 9
TARGET SPECIFICATION
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNQ830P-E 功能描述:功率驅(qū)動(dòng)器IC Quad Ch HiSide Drivr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNQ830PEP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:QUAD CHANNEL HIGH SIDE DRIVER
VNQ830PEP-E 功能描述:功率驅(qū)動(dòng)器IC Quad Ch HiSide Drivr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNQ830PEPTR-E 功能描述:功率驅(qū)動(dòng)器IC Quad Ch HiSide Drivr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNQ830PTR-E 功能描述:功率驅(qū)動(dòng)器IC Quad Ch HiSide Drivr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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