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參數(shù)資料
| 型號： | VNQ690SP |
| 廠商： | 意法半導體 |
| 英文描述： | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| 中文描述： | 四通道高邊固態(tài)繼電器 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 188K |
| 代理商： | VNQ690SP |
9/19
VNQ690SP
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
ld
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
CC
max DC rating. The
same applies if the device will be subject to transients on
the V
CC
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V
CC
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of
μ
C I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k
≤
R
prot
≤
65k
.
Recommended R
prot
value is 10k
.
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