參數(shù)資料
型號: VNP49N04FI
廠商: 意法半導(dǎo)體
英文描述: Fully Autoprotected Power MOSFET(全自動保護功率MOSFET)
中文描述: 充分Autoprotected功率MOSFET(全自動保護功率MOSFET的)
文件頁數(shù): 1/13頁
文件大?。?/td> 147K
代理商: VNP49N04FI
VNP49N04FI
VNB49N04/VNV49N04
”O(jiān)MNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM (
)
TYPE
V
clamp
R
DS(on)
0.02
0.02
0.02
I
lim
VNP49N04FI
VNB49N04
VNV49N04
42 V
42 V
42 V
49 A
49 A
49 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORT CIRCUIT PROTECTION
I
INTEGRATED CLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
I
ESD PROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP49N04FI, VNB49N04 and VNV49N04
are
monolithic
devices
STMicroelectronics
VIPower M0
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
made
using
Technology,
enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
10
PowerSO-10
1
2
3
1
3
D2PAK
TO-263
ISOWATT220
(
) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10;SOURCE =1,2,4,5; DRAIN = TAB
1/13
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VNP5N07-E 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube