參數(shù)資料
型號(hào)： VND600SP
廠商： 意法半導(dǎo)體
英文描述： Double Channel High Side Solid State Relay(雙通道高邊智能功率固態(tài)繼電器)
中文描述： 雙通道高側(cè)固態(tài)繼電器（雙通道高邊智能功率固態(tài)繼電器）
文件頁數(shù)： 5/8頁
文件大?。?/td> 61K
代理商： VND600SP
5/8
VND600SP
ELECTRICAL TRANSIENT REQUIREMENTS
SWITCHING CHARACTERISTICS
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Levels
I
Test Levels
II
Test Levels
III
Test Levels
IV
Test Levels
Delays and Impedance
-25V
+25V
-25V
+25V
-4V
+26.5V
-50V
+50V
-50V
+50V
-5V
+46.5V
-75V
+75V
-100V
+75V
-6V
+66.5V
-100V
+100V
-150V
+100V
-7V
+86.5V
2ms, 10
0.2ms, 10
0.1
μ
s, 50
0.1
μ
s, 50
100ms, 0.01
400ms, 2
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
Test Levels Result
I
Test Levels Result
II
Test Levels Result
III
Test Levels Result
IV
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
E
C
C
C
C
C
E
Class
C
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
E
1
V
LOAD
dV
out
/dT
(on)
t
r
80%
10%
t
f
dV
out
/dt
(off)
t
d(off)
t
d(on)
INPUT
t
t
90%
PROTECTING
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage is to insert a resistor
paralleled to a Schottky diode between the ground pin of
the device and the ground of the system. The proposed
THE
DEVICE
AGAINST
value for the resistance is 1K
.
This way is suggested
working with inductive loads. For resistive loads only, a
suitable protection is to use one 150
resistor. In this
case the value of the resistance is chosen by taking in
account the current consumption through the ground pin.
相關(guān)PDF資料
PDF描述
VND600 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
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VND600PEP DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND600PEP13TR DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND7N04 "OMNIFET": Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VND600SP13TR 功能描述:固態(tài)繼電器-PCB安裝 36V 25A Hi-Side SSR RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
VND600SP-E 功能描述:功率驅(qū)動(dòng)器IC 36V 25A Hi-Side SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND600SP-E 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH SO-10
VND600SPTR-E 功能描述:電源開關(guān) IC - 配電 36V 25A Hi-Side SSR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VND600TR-E 功能描述:電源開關(guān) IC - 配電 DBLE CH HI-SIDE DRVR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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