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參數(shù)資料
| 型號(hào)： | VND5N0713TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | ？OMNIFET？：完全AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 367K |
| 代理商： | VND5N0713TR |
3/15
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise specified)
Table 5. Off
Symbol
Table 6. On
(1)
Symbol
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Table 7. Dynamic
Symbol
Note: 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Table 8. Switching
(3)
Symbol
Note: 3. Parameters guaranteed by design/characterization.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp Voltage
I
D
= 200 mA; V
in
= 0
60
70
80
V
V
CLTH
Drain-source Threshold Voltage
I
D
= 2 mA; V
in
= 0
55
V
V
INCL
Input-Source Reverse Clamp
Voltage
I
in
= –1 mA
–1
–0.3
V
I
DSS
Zero Input Voltage Drain
Current (V
in
= 0)
V
DS
= 13 V; V
in
= 0
V
DS
= 25 V; V
in
= 0
50
200
μA
μA
I
ISS
Supply Current from Input Pin
V
DS
= 0 V; V
in
= 10 V
250
500
μA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold Voltage
V
DS
= V
in
; I
D
+ I
in
= 1 mA
0.8
3
V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V; I
D
= 2.5 A
V
in
= 5 V; I
D
= 2.5 A
0.200
0.280
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(2)
Forward Transconductance
V
DS
= 13 V; I
D
= 2.5 A
3
4
S
C
oss
Output Capacitance
V
DS
= 13 V; f = 1 MHz; V
in
= 0
200
300
pF
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V; I
d
= 2.5 A;
50
100
ns
t
r
Rise Time
V
gen
= 10V; R
gen
= 10
60
100
ns
t
d(off)
Turn-off Delay Time
(see Figure 28)
150
300
ns
t
f
Fall Time
40
80
ns
t
d(on)
Turn-on Delay Time
V
DD
= 15 V; I
d
= 2.5 A;
150
250
ns
t
r
Rise Time
V
gen
= 10V; R
gen
= 1000
400
600
ns
t
d(off)
Turn-off Delay Time
(see Figure 28)
3900
5000
ns
t
f
Fall Time
1100
1600
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V; I
D
= 2.5 A
V
in
= 10 V; R
gen
= 10
80
A/μS
Q
i
Total Input Charge
V
DD
= 12 V; I
D
= 2.5 A; V
in
= 10 V
18
nC
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| VND5N07-1 | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
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|---|---|
| VND5N0713TR-E | 制造商:STMicroelectronics 功能描述: |
| VND5N07-1-E | 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND5N07-E | 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VND5N07FI | 制造商:STMicroelectronics 功能描述: |
| VND5N07FM | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET: FULLY AUTOPROTECTED POWER MOSFET |
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